收藏本站
PD - 9.1478A
IRF4905S/L
HEXFET ? Power MOSFET
l
Advanced Process Technology
l Surface Mount (IRF4905S)
l Low-profile through-hole (IRF4905L)
D
V DSS = -55V
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
G
S
R DS(on) = 0.02 ?
I D = -74A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
D Pak
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF4905L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
2
Max.
T O -2 6 2
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ -10V ?
-74
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ -10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
-52
-260
3.8
200
1.3
± 20
930
-38
20
-5.0
A
W
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
–––
0.75
40
°C/W
8/25/97
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRF510STRLPBF MOSFET N-CH 100V 5.6A D2PAK
IRF510 MOSFET N-CH 100V 5.6A TO-220AB
IRF520NSTRR MOSFET N-CH 100V 9.7A D2PAK
IRF520N MOSFET N-CH 100V 9.7A TO-220AB
IRF520SPBF MOSFET N-CH 100V 9.2A D2PAK
IRF5210L MOSFET P-CH 100V 40A TO-262
IRF5305L MOSFET P-CH 55V 31A TO-262
IRF530A MOSFET N-CH 100V 14A TO-220
相关代理商/技术参数
IRF4905STRRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 74A 3-Pin(2+Tab) D2PAK T/R
IRF4905STRRPBF 功能描述:MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF4N60 制造商:SUNTAC 制造商全称:SUNTAC 功能描述:POWER MOSFET
IRF4N60FP 制造商:SUNTAC 制造商全称:SUNTAC 功能描述:POWER MOSFET
IRF500 制造商:未知厂家 制造商全称:未知厂家 功能描述:50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRF500C10RJ 制造商:未知厂家 制造商全称:未知厂家 功能描述:50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRF510 功能描述:MOSFET N-Chan 100V 5.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF510_R4941 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube